Search results for "A. Optical materials"
showing 3 items of 3 documents
Synthesis and characterization of chalcogenide glasses from the system Ga-Ge-Sb-S and preparation of a single-mode fiber at 1.55 μm
2008
International audience; The aim of this work is to study different compositions in the Ga-Ge-Sb-S system for the definition of two compositions compatible with the elaboration of a single-mode fiber at the 1.55 μm telecom wavelength. The variations of the glass transition temperature (Tg), the dilatation coefficient (α) and the refractive index (n) have been studied for two glasses series: GaxGe25−xSb10S65 (series 1), Ga5Ge25−xSb10S60+x (series 2). This study has lead to the choice of the Ga4Ge21Sb10S65 composition as clad glass for the preparation of the single-mode fiber and Ga5Ge20Sb10S65 composition as the core. The discrepancies for the studied parameters between the core and clad comp…
Hybrid silicon on insulator/polymer electro-optical intensity modulator operating at 780 nm
2014
Currently inorganic materials prevail as the nonlinear active medium for light modulation in electro-optical (EO) device technology. A recent promising trend is to consider organic nonlinear optical materials for application in EO modulators due to their multiple advantages including low costs and high EO coefficients. In this paper, we proposed a new type of polymer EO modulator whose fabrication is compatible with the currently used silicon on insulator technology. Our numerical optimization of the proposed structure demonstrates that it is theoretically possible to achieve a half-wave voltage as low as 1.56 V for a 1 cm long modulator structure operating at 780 nm. Based on the results o…
Chalcogenide Glasses Based on Germanium Disulfide for Second Harmonic Generation
2007
International audience; High second-order susceptibilities are created by thermal poling in bulk germanium disulfide based chalcogenide glasses. Experimental conditions of the poling treatment (temperature, voltage, time) were optimized for each glass composition. The second-order nonlinear signals were recorded by using the Maker fringes experiment and a second-order coefficient χ(2) up to 8 pm V-1 was measured in the Ge25Sb10S65 glass. This value is obtained using a simulation based on accurate knowledge of the thickness of the nonlinear layer. Two mechanisms are proposed to explain the creation of a nonlinear layer under the anode: the formation and the migration of charged defects towar…